Effects of Concentration and Energy Distribution of Electronic Interface Traps on Electrical Characteristics of Metal-Oxide-Silicon (MOS) Capacitors and Transistors.

Electronic traps, or electron and hole traps, at the interface of oxidized silicon pose increasing limits on the performances and endurance of metal-oxide-silicon capacitors and transistors and integrated circuits for digital, analog, and memory applications. Effects of increasing concentration and broad energy distributions of electronic interface traps on the lineshapes of the high and low frequency capacitance and dc recombination current characteristics as a function of gate voltage or surface potential are described and compared with experiments.