AFM and SThM Characterization of Graphene

ORAL

Abstract

We report on detailed characterization of epitaxial grown graphene on SiC and chemical vapor deposition grown graphene on Cu foil using atomic force microscopy (AFM) and scanning thermal microscopy (SThM). We focus on the electronic and thermal properties of graphene grain boundaries, and thus providing valuable feedback to materials growth. Specifically, we perform thermal conductivity contrast mapping and surface potential mapping of graphene, and compare with that obtained on the Au electrodes and the substrate.

Authors

  • Christopher Foy

    • Georgia Institute of Technology
  • Anton Sidorov

    • Georgia Institute of Technology
  • Xunchi Chen

    • Georgia Institute of Technology
  • Ming Ruan

    • Georgia Institute of Technology
  • Claire Berger

    • Georgia Institute of Technology
  • Walter de Heer

    • Georgia Institute of Technology
  • Zhigang Jiang

    • Georgia Institute of Technology