Characterizing Germanium (Ge) Crystals for Developing Ge detectors

ORAL

Abstract

The carrier concentration, the mobility of the charge carriers and the resistivity are some of the key electrical properties which are used to determine the quality of the grown HPGe crystals in the laboratory. A Vander Pauw Hall - Effect measurement system is used to measure the above mentioned electrical properties. We study the systematic error in measuring electrical properties using the Hall Effect with samples cut into different shapes. An optical microscope (Nikon Eclipse LV150L) is used to observe and count dislocations to calculate the dislocation density. We report the systematic errors in Hall Effect measurements that will impact the detector performance. This work is supported by NSF OISE-1743790 and NSF PHY-1902577.

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Presenters

  • Mathbar Singh Raut

    University Of South Dakota

Authors

  • Mathbar Singh Raut

    University Of South Dakota

  • Sanjay Bhattarai

    University of South Dakota, University of South Dakota, University of South Dakota, University Of South Dakota

  • Jing Liu

    University of South Dakota, University of South Dakota, University of South Dakota

  • Hao Mei

    University of South Dakota, University of South Dakota, University of South Dakota

  • Dongming Mei

    University of South Dakota, University of South Dakota, University of South Dakota

  • Gang Yang

    University of South Dakota

  • Guojian Wang

    University of South Dakota, University of South Dakota