Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from USD-Grown Germanium Crystals

ORAL

Abstract

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the I-V characteristics, C-V characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts. This work is supported by NSF OISE-1743790 and NSF PHY-1902577.

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Presenters

  • Wenzhao Wei

    University of South Dakota

Authors

  • Wenzhao Wei

    University of South Dakota

  • Yangyang Li

    University of South Dakota

  • Xianghua Meng

    University of South Dakota

  • Jing Liu

    University of South Dakota, University of South Dakota, University of South Dakota

  • Guojian Wang

    University of South Dakota

  • Hao Mei

    University of South Dakota

  • Gang Yang

    University of South Dakota

  • Dongming Mei

    University of South Dakota, University of South Dakota, University of South Dakota

  • Chao Zhang

    Mount Marty College