Strontium-Osmium-oxide films by molecular beam epitaxy

POSTER

Abstract

Metallic SrO-OsO$_{\mathrm{2}}$ thin films were grown on (001)-oriented SrTiO$_{\mathrm{3\thinspace }}$and Lanthanum-Strontium-Aluminum-Tantalum (LSAT) substrates by molecular beam epitaxy as a function of substrate temperature from 480 to 650 \textdegree C. We explored the SrO-OsO$_{\mathrm{2}}$ ternary phase diagram to establish appropriate thermodynamic conditions to synthesize the possibly-superconducting Sr$_{\mathrm{2}}$OsO$_{\mathrm{4}}$ phase. X-ray diffraction showed that crystallographic phase of the resulting film depended on substrate temperature. Temperature dependent resistivity was measured by four-probe method from 300 to 4 K. The lowest room temperature resistivity achieved was 0.467 m$\Omega $-cm for a film grown at 480 \textdegree C. The resistivity achieved at 4 K was 0.480 m$\Omega $-cm. Superconducting osmate films have potential applications in quantum computers.

Authors

  • Tommy Boykin II

    University of Central Florida

  • Yoshiharu Krockenberger

    University of California, Santa Cruz, Sandia National Lab, Florida Polytechnic University, Colorado School of Mines, Florida Industrial and Phosphate Research Institute, FL Polytech University, Kenyon College, Institute for Gravitation and the Cosmos, The Pennsylvania State University, University of Wisconsin-Milwaukee, Vanderbilt University, NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, Florida Space Institute, University of Central Florida, Orlando, FL, 32816, Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL, 32816, Department of Materials Science and Engineering, University of Cent, UC Davis, University of Central Florida, Polish Academy of Sciences, Los Alamos National Laboratory, Nippon Telegraph and Telephone (NTT) Basic Research Laboratories