Resonant charge transfer in H$^-$ ions scattering off Si(100) surfaces

We present numerical calculations on the one-electron charge exchange between an unreconstructed Si(100) surface and H$^-$ ions that are incident at kinetic energies of 1 keV. The ground state electronic structure of the surface is derived within a self-consistent screened pseudopotential Thomas-Fermi method. Si crystal wave functions and energies of the electron states that this potential holds are calculated by solving one-particle Schr\"{o}dinger equations. Resonant charge transfer ion-surface couplings are derived, and Newns-Anderson model is solved within a self-energy method. The neutralization probability of the anion after the collision is calculated and compared with available experimental data of [1]. \newline $[1]$ M.~Maazouz \emph{et al.} Surf.~Sci. {\bf 398}, 49 (1998). \newline \newline Supported by NSF and the Division of Chemical Sciences, Office of BES, Office of Energy, US DOE.