Optically-detected spin polarization magnetometry in V_Si vacancies of 4H-SiC

Hexagonal type silicon carbide (4H-SiC) an attractive material platform for high power, radiation robust electronics and electrically modulated photonics, because of its excellent electronic and optical properties, high-purity commercial wafers, and mature fabrication technology. We study the silicon vacancy (V_Si) as a promising candidate to integrate room temperature quantum sensing within the 4H-SiC platform. We present updated ODSP (optically detected spin polarization) results and compare with ODMR (optically detected magnetic resonance) measurements to build a quantitative, experimentally informed model for the spin polarization dynamics of V_Si.