Quantum computing in Penning trap arrays

Trapped-ions provide one of the leading approaches to quantum computing, but the use of radio-frequency traps poses a number of challanges in scaling up. I will present results from our work on overcoming these using microfabricated Penning traps, where we static electric potentials produced from micro-fabricated electric structures with a homogenous magnetic field from a superconducting magnet. Using this approach, we have demonstrated trapping of ion arrays in local potential wells, as well as the ability to translate ions arbitrarily in 3 dimensions by simple translation of the static potential, allowing the ion to be used as a scanning sensor [1,2]. I will also describe gate implementations for universal high-fidelity gates, and give an overview over the possibilities for scaling in this approach. For the latter the absence of high-voltage radio-frequency fields presents a considerable advantage for chip fabrication and device integration.