High-Fidelity Raman Spin-Dependent Kicks in the Presence of Micromotion

We investigate the implementation of spin-dependent kicks (SDKs) in trapped ions using nanosecond Raman pulses produced through amplitude modulation of a continuous-wave laser. By analyzing the effects of ion micromotion, we identify optimal choices of the radio-frequency phase and modulation frequency that strongly suppress unwanted backward kicks and preserve gate performance. Using this approach, we find that single-qubit SDKs can achieve infidelities near 10^{-9} in ideal conditions and on the order of 10^{-5} even in the presence of micromotion. Our results demonstrate a viable route to sub-trap-period control and fast two-qubit gates based on SDK techniques.