Time- and space-resolved Si emission measurements of the Z-pinch dynamic hohlraum
ORAL
Abstract
Simulations of the Z-pinch dynamic hohlraum predict a radiating shock in the 14mg/cc CH$_2$ foam that reaches T$_e >$ 600eV with a peak hohlraum temperature of T$_r >$ 200eV. To test these simulations, an advanced diagnostic technique has been developed that relies on the measurement of time- and space- resolved Si line emission in combination with 2-D collisional- radiative calculations to infer the conditions of the dynamic hohlraum interior. The line emission originates from Si atoms doped over the central 3 - 6mm height of the foam, and is recorded on an elliptical spectrometer with 1-D spatial resolution imaging through a slot aperture on the top of the dynamic hohlraum. The 2-D calculations assume a 2 or 3 region model of the Si-doped CH$_2$ foam conditions, and include non- local photo-pumping processes that are determined to have an important influence on the observed spectra. The time- and space-resolved conditions of the dynamic hohlraum interior inferred from this technique are presented and compared with 2- D rad-hydro simulations.
*Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000.
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