Color center qubit synthesis far from equilibrium with ion pulses from laser-acceleration
ORAL
Abstract
Intense ion pulses from laser-plasma ion acceleration enable rapid local electronic excitation and heating of materials and extend the parameter range for color center qubit synthesis. We characterize multi-species ion pulses with in situ diagnostics and ex situ sample analysis with a series of laser targets (including Kapton and titanium). Intense ion pulses can simultaneously heat and dope materials so that color centers can form directly, without thermal annealing. We quantify color center properties in low temperature photoluminescence measurements where we observe effects of the ion flux and ion fluence on color center formation efficiencies and linewidth broadening. We have identified conditions for formation of high quality G-centers, with an ensemble linewidth of <0.1 nm (full width half maximum), narrower than previously reported. We will discuss requirements for color center qubit integration and opportunities for color center synthesis with intense ion pulses.
*This work at Berkeley Lab was supported by the Office of Science, Office of Fusion Energy Sciences, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231, and supported by the U.S. Dept. of Energy National Nuclear Security Administration Defense Nuclear Nonproliferation R&D (NA-22).
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Publication: [1] Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams, Quantum Beam Sci. 2022, 6(1), 13
[2] Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers, arXiv preprint arXiv:2206.04824
Presenters
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Wei Liu
- Lawrence Berkeley National Laboratory
- ATAP, Lawrence Berkeley National Lab