Plasma processing for color center qubit optimization - simulations and experiments
POSTER
Abstract
Color centers in semiconductors are promising qubits for applications in quantum sensing and quantum communication. Color centers often form when dopants are introduced into the host crystal matrix combined with energetic radiation and thermal annealing. QIS applications benefit from color centers that can be formed reliably of high quality and this poses new challenges and opportunities for materials processing including with ion beams and plasmas. We utilize EDIPIC-2D, a simulation code that is parallelized, to estimate the energy and particle distribution for a variety of hydrogen plasma conditions. We report on plasma simulations that inform experiments on plasma doping and color center formation and on experimental results from color center characterization in silicon and diamond.
*This work at Berkeley Lab was supported by the Office of Science, Office of Fusion Energy Sciences, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231. The work of I.K. and A. K. was supported by the Princeton Collaborative Research Facility (PCRF), which is funded by the U.S. Department of Energy (DOE) under Contract No. DE-AC02–09CH11466.
Presenters
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Kaushalya Jhuria
- Lawrence Berkeley National Laboratory
- ATAP, Lawrence Berkeley National Lab