Early-time temperature growth due to a three-dimensional, nonlinear perturbation in current-driven metal

ORAL

Abstract

The electrothermal instability (ETI) is a Joule heating-driven instability that is important in applications of current-driven metal. Existing ETI theory employs linear stability analysis to predict the growth rate of infinitesimally small temperature perturbations. However, common seeds for ETI are isolated defects in the metal (e.g., resistive inclusions and voids), which constitute three-dimensional (3D), nonlinear perturbations. Hence, studying defect-driven ETI growth necessitates extending ETI theory to the nonlinear regime, which requires self-consistently solving for the evolving electrical conductivity and current density profiles. In this work, we use the analogy between hydrodynamic and electrical current flow, as well as a fortuitous property of the Joule heating profile, to obtain an expression for the temperature growth due to a 3D defect, valid in the early-time, nonlinear regime. Finally, we compare results of the theory with 3D magnetohydrodynamic simulations.

*Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the US Department of Energy’s National Nuclear Security Administration under Contract DE-NA0003525.

Publication: E.P. Yu, T.J. Awe, K.R. Cochrane et al., Phys. Rev. Lett. 130, 255101 (2023)

Presenters

  • Edmund P Yu

    • Sandia National Laboratories

Authors

  • Edmund P Yu

    • Sandia National Laboratories
  • Thomas J Awe

    • Sandia National Laboratories
  • Kyle R Cochrane

    • Sandia National Laboratories
  • Kyle J Peterson

    • Sandia National Laboratories
  • Kevin C Yates

    • Sandia National Laboratories
  • Trevor M Hutchinson

    • Lawrence Livermore Natl Lab
  • Maren W Hatch

    • Sandia National Laboratores
  • Bruno S Bauer

    • University of Nevada, Reno
  • Kurt Tomlinson

    • General Atomics
  • Daniel B Sinars

    • Sandia National Laboratories