Optimization of light-emitting defects in silicon with plasmas, ion beams, and lasers
ORAL
Abstract
Light-emitting defects (or color centers) in semiconductors are promising qubit candidates for applications in quantum sensing and quantum communication. Color centers often form when dopants are introduced into the host crystal matrix combined with energetic radiation and thermal annealing. Quantum information science (QIS) applications benefit from high
quality color centers that can be formed reliably and this poses new challenges and opportunities for material processing including with ion beams and plasmas. We report on the synthesis of high-quality color centers using terawatt to petawatt laser-plasma-driven ion beams to implant selected elements including boron, titanium, and carbon into silicon. Color centers, including qubit candidates such as W, G, and C-centers in silicon, form directly under these conditions of laser-ion doping.
Color center synthesis with the laser-ion plasma-driven approach complements and can be combined with processing methods including conventional ion implantation, thermal annealing, exposure to H2 plasmas, and fs lasers for local formation and passivation of high-quality color centers. We outline directions toward scalable integration of color centers in silicon for applications in QIS.
*This work at Berkeley Lab was supported by the Office of Science, Office of Fusion Energy Sciences, of the U.S. DOE, under Contract No.DE-AC02-05CH11231. Some of the results presented here are based on an experiment performed at the PHELIX facility, GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany) in the framework of the FAIR Phase-0 program. Plasma processing was conducted at PPPL through the Princeton Collaborative Research Facility supported by the U.S. Department of Energy (DOE) under Contract No. DE-AC02-09CH11466
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Publication:References [1] Redjem, W., et al. Defect engineering of silicon with ion pulses from laser acceleration. Commun Mater 4, 22 (2023). [2] Redjem, W., Zhiyenbayev, Y., Qarony, W. et al. All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity. Nat Commun 14, 3321 (2023). [3] Jhuria, K., et al. Programmable quantum emitter formation in silicon, arXiv:2307.05759.
Presenters
Kaushalya Jhuria
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Authors
Kaushalya Jhuria
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Arun Persaud
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Debanjan Polley
EECS, University of California, Berkeley, CA 94720, USA; Department of Physics and Nanotechnology, SRM Institute of Sci. Chennai India
Jeffrey Bokor
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
Johannes Hornung
GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany
GSI Helmholtzzentrum für Schwerionenforschung
Jeroen v van Tilborg
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA
Lawrence Berkeley National Laboratory
Liang Z Tan
Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley
Lawrence Berkeley National Laboratory
Pascal Boller
GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße
GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany; Technische Universität Darmstadt, Institut für Kernphysik, Darmstadt, Germany
Prabin Parajuli
Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Qing Ji
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Robert Jacob
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA
Lawrence Berkeley National Laboratory
Tobias Ostermayr
Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Vsevolod Ivanov
Molecular Foundry, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Lab
Vincent Bagnoud
GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße
GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany
Technische Universität Darmstadt
Walid Redjem
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
Wayesh Qarony
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
Wei Liu
ATAP, Lawrence Berkeley National Lab
Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA
Yertay Zhiyenbayev
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
