Fractional Resistivity Change Induced by Butanethiol on a Au(111) Thin Film

The fractional resistivity change Δ𝛒/𝛒₀ of a 150 nm thick Au(111) film caused by chemisorption of butanethiol on the surface was studied. All experiments were done under ultra-high vacuum conditions and the films were sputter cleaned with Ar+ ions before dosing . The surface condition of the sample was observed by Auger spectroscopy before and after sputter cleaning and after dosing. Δ𝛒/𝛒₀ was found to be in a range of 0.1270% - 0.4948% for doses in a range of 0.014 - 0.203 L, with a mean value of 0.29% ± 0.05%. For a 312 L dose Δ𝛒/𝛒₀ was measured to be 0.859% ± 0.004%. The Δ𝛒/𝛒₀ measurements are compared with measurements previously collected for diethyl disulfide adsorption on Au(111).