Electrical Anisotropy in InSe/MoO3 heterostructure 2D Field Effect Transistor

Van-der-Waals heterostructures can exhibit electronic properties that are not present in their constitutes due to proximity effects, making them of great fundamental and technological interest. We investigate the gating behaviour of a heterostructure of CVD-grown low-symmetry MoO3 stacked on the top of high-mobility isotropic InSe. We fabricate four-probe devices and investigate the emergence of electrical anisotropy in the heterostructure by estimating the field effect mobility along two different directions.