Fractional Resistivity Change Of Au(111) Thin Films Dosed With Diethyl Disulfide

At a base pressure of 2.5 x 10^-10 Torr, the surfaces of 150 nm thick Au(111) films were Ar+ ion sputter cleaned and annealed to ~500℃. The resistance change of the Au(111) films due to diethyl disulfide dosing was measured using a four-probe, lock-in technique. The adsorbate-induced change in resistance determined the fractional change in resistivity. Auger spectroscopy determined surface composition, and the effect of cleanliness of the sample on the fractional change in resistivity was studied.