Suspended Molybdenum Disulfide Field Effect Transistors

ORAL

Abstract

We fabricate suspended molybdenum disulfide (MoS$_{\mathrm{2}})$ field effect transistors (FET) devices and develop an effective gas annealing technique that significantly improves device quality and increases conductance by 3-4 orders of magnitude. Mobility of the suspended devices ranges from 0.01 to 10 cm$^{\mathrm{2}}$/Vs before annealing, and 0.5 to 85 cm$^{\mathrm{2}}$/Vs after annealing. Temperature dependence measurements reveal two transport mechanisms: electron-phonon scattering at high temperatures and thermal activation over a gate-tunable barrier height at low temperatures. Our results suggest that transport in these devices is not limited by the substrates, but likely by defects, charge impurities and/or Schottky barriers at the metal-MoS$_{\mathrm{2}}$ interfaces. Finally, this suspended MoS$_{\mathrm{2}}$ device structure provides a versatile platform for other research areas, such as thermal, optical and mechanical studies.

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Authors

  • Fenglin Wang

    Department of Physics and Astronomy, University of California, Riverside

  • V.V. Shlyaptseva

    California State University, Dominguez Hills, Univ of California - Irvine, University of Chicago, UC Merced, NINT, Dublin Institute of Technology, Ireland, MIT, NASA/GSFC, CRESST/UMBC \& NASA/GSFC, LLNL, MPI for Plasma Physics, Remeis-Sternwarte/ECAP/FAU, Humboldt State University, University of Nevada Reno, The University of Michigan, University of Nevada, Reno, Lawrence Livermore National Laboratory, Sandia National Laboratories, Los Alamos National Laboratory, Laboratory for Laser Energetics, University of Rochester, Univ of Nevada - Reno, University of Nevada, Reno - Physics Department, Jilin University, China, Department of Physics, University of California, Berkeley, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Advanced Materials Laboratory, National Institute for Materials Science, Department of Physics \& Astronomy, California State University, Long Beach, CA 90840, UC Santa Barbara, Department of Physics and Astronomy, University of California, Riverside, University of California at Merced, Laboratoire de Physique des Plasmas (CNRS/Ecole Polytechnique/UPMC/Universit\'e Paris Sud), Ecole Polytechnique, 91128 Palaiseau, France, University of Nevada, Reno, NV 89557, USA, University of Nevada, Reno, NV 89557 USA, University of Nevada-Reno

  • V.V. Shlyaptseva

    California State University, Dominguez Hills, Univ of California - Irvine, University of Chicago, UC Merced, NINT, Dublin Institute of Technology, Ireland, MIT, NASA/GSFC, CRESST/UMBC \& NASA/GSFC, LLNL, MPI for Plasma Physics, Remeis-Sternwarte/ECAP/FAU, Humboldt State University, University of Nevada Reno, The University of Michigan, University of Nevada, Reno, Lawrence Livermore National Laboratory, Sandia National Laboratories, Los Alamos National Laboratory, Laboratory for Laser Energetics, University of Rochester, Univ of Nevada - Reno, University of Nevada, Reno - Physics Department, Jilin University, China, Department of Physics, University of California, Berkeley, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Advanced Materials Laboratory, National Institute for Materials Science, Department of Physics \& Astronomy, California State University, Long Beach, CA 90840, UC Santa Barbara, Department of Physics and Astronomy, University of California, Riverside, University of California at Merced, Laboratoire de Physique des Plasmas (CNRS/Ecole Polytechnique/UPMC/Universit\'e Paris Sud), Ecole Polytechnique, 91128 Palaiseau, France, University of Nevada, Reno, NV 89557, USA, University of Nevada, Reno, NV 89557 USA, University of Nevada-Reno

  • V.V. Shlyaptseva

    California State University, Dominguez Hills, Univ of California - Irvine, University of Chicago, UC Merced, NINT, Dublin Institute of Technology, Ireland, MIT, NASA/GSFC, CRESST/UMBC \& NASA/GSFC, LLNL, MPI for Plasma Physics, Remeis-Sternwarte/ECAP/FAU, Humboldt State University, University of Nevada Reno, The University of Michigan, University of Nevada, Reno, Lawrence Livermore National Laboratory, Sandia National Laboratories, Los Alamos National Laboratory, Laboratory for Laser Energetics, University of Rochester, Univ of Nevada - Reno, University of Nevada, Reno - Physics Department, Jilin University, China, Department of Physics, University of California, Berkeley, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Advanced Materials Laboratory, National Institute for Materials Science, Department of Physics \& Astronomy, California State University, Long Beach, CA 90840, UC Santa Barbara, Department of Physics and Astronomy, University of California, Riverside, University of California at Merced, Laboratoire de Physique des Plasmas (CNRS/Ecole Polytechnique/UPMC/Universit\'e Paris Sud), Ecole Polytechnique, 91128 Palaiseau, France, University of Nevada, Reno, NV 89557, USA, University of Nevada, Reno, NV 89557 USA, University of Nevada-Reno