Introduction of a novel method for manufacturing ultrathin silicon ribbon

We report on a new and quick (ca. 1 hour!) route for fabricating ultrathin silicon substrate directly from \textit{in-situ} molten silicon by an inductor heater spin-melt based technique. Structural and compositional properties of silicon substrate indicate a pure (without SiO$_{2}$, SiC formation) and polycrystalline nature of the fabricated ribbon. Compared to conventional methods for manufacturing thin silicon substrates, including edge stabilized growth (ESG), edge-defined film-fed growth (EFG), ribbon growth on substrate (RGS), etc., our development shows significant thickness reduction. In this regard, we were able to obtain unprecedented 20 $\mu$m thick samples, without any supporting carrier. We anticipate our high-speed low cost fabrication approach of silicon substrates to have a great potential in photovoltaic and semiconductor industry.