Verfication of 1k x 1k Radiation-Hardened CMOS Pixel Sensor!

Lawrence Livermore National Laboratory (LLNL) is evaluating a 4k x 4k complementary metal-oxide semi-conductor (CMOS) active pixel sensor (APS) for radiation-hardened applications in the National Ignition Facility (NIF) target chamber. NIF is working to achieve fusion and requires diagnostic devices, such as active pixel sensors, inside the target chamber to be radiation-hardened. As a proof-of-concept, LLNL is validating a 1k x 1k version of the same sensor. The validation of the CMOS sensor include performance characterization and evaluation of the sensor's performance in a radiation environment. When implemented, this sensor will provide scientists with a robust and reliable photodetector that retains fidelity past a 100 krad radiation dose.