h-BN encapsulation of atomically thin layers of PtTe2 for electronic transport measurements at low temperatures

PtTe2 has been demonstrated to have interesting topological properties. It's band structure presents different Dirac-like dispersions that host type-II Dirac fermions as well as chiral surface states. The fabrication of electronic devices for the manipulation and tuning of these states is desired. However, the mechanical exfoliation and isolation of atomically thin PtTe2 flakes in challenging, as it is for other transition metal dichalcogenides. Here, we present details on the sample fabrication of thin crystals of PtTe2, assessed through atomic force microscopy and encapsulated with hexagonal boron nitride (hBN), for future electronic transport measurements at low temperatures.