Atomically Thin Two-Dimensional Materials for Memory Storage Devices

As computing devices scale and Moore’s Law slows, the need for technological advances in computing also increases, leading to the investigation of alternatives to traditional transistors. An excellent competitor has shown to be memristor devices. Memristor devices have begun to show much promise in the field of memory devices and neuromorphic computing.This work presents the fabrication and characterization of memristive devices based on a layered heterostructure consisting of hexagonal boron nitride (h-BN), graphite, bilayer molybdenum disulfide (MoS₂), and gold electrodes. The heterostructure was assembled using a PPC-transfer technique to ensure clean interfaces and reliable electrical contact. Electrical measurements reveal clear hysteresis behavior in the current-voltage (I–V) characteristics, indicative of memristive switching. The observed hysteresis is being investigated particularly at the MoS₂/h-BN and MoS₂/graphite interfaces.These results demonstrate the potential of two-dimensional material systems for next-generation memristive devices, with implications for neuromorphic computing and non-volatile memory applications. The influence of material thickness, electrode configuration, and sweep rate on the switching behavior is also discussed.