Raman Spectroscopy of Atomically Thin Transition Metal Dichalcogenides

Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs), have emerged as a platform for exploring novel quantum phenomena and developing low-power optoelectronic devices. An important step along this path is the ability to successfully isolate and verify that atomically thin monolayers have been created. In this work, we combine atomic force microscopy and Raman spectroscopy to investigate exfoliated MoS₂ monolayers. Raman measurements confirmed monolayer quality through peak separation analysis (18 inverse cm between the E_2g¹ and A_1g modes). Results have been further confirmed by atomic force microscopy. These results pave the way toward more sophisticated measurements to be conducted in the near future utilizing superresolution and tip-enhanced Raman spectroscopy (TERS) to analyze the properties of moiré heterostructures, potentially advancing the study of atomically thin semiconductors and guide the design of next-generation quantum and optoelectronic devices.