Gas Temperature and Metastable Density Measurements in Ar/H$_{2 }$DBD Using Diode-Laser Absorption Spectroscopy

POSTER

Abstract

Short-pulse excited DBDs are viable sources of UV, VUV radiation and radical flux at low gas temperatures for material processing applications. In this work, a 20{\%} H$_{2}$/Ar short-pulse (15 ns FWHM) excited DBD was operated between 5-50 Torr, 6-8 kV, and 5 kHz repetition rate. Diode-Laser Absorption Spectroscopy was used to obtain Ar 1s$_{3}\to $2p$_{2}$ transition profiles near 772.4 nm for bulk gas temperature and metastable line density measurements which are important for estimating both the power deposition efficiency into electronic states and the E/n. Absorption profiles obtained below 30 Torr were used to extract gas temperature, collisional Lorentzian linewidth, and absolute Ar line densities using standard iterative lineshape fitting techniques. In accordance with Lindholm-Foley T$^{0.3}$ scaling law for van der Waals interactions, we used the Lorentzian linewidths to obtain the pressure broadening coefficient for this gas mixture, which was found to be in agreement with the value for pure argon. Temperature and Ar* density were extracted from the pressure-broadened 50 Torr profile using an accurate method which self-consistently incorporates knowledge of the collisional line broadening parameter, the Doppler component, and the Voigt linewidth. At 50 Torr, we also estimated the energy deposition efficiency of direct electron impact metastable production based upon time-resolved power measurements and absolute Ar metastable line density.

Authors

  • Shunji Kuroiwa

    PSAC/NIE/NTU, Singapore, School of Physics, The University of Sydney, Sydney NSW 2006, Australia, Nantes University, France, Varian Semiconductor Equipment Associates, Gloucester, MA01930, USA, Institute of Physics, POB 68, 11080 Zemun, Belgrade, Serbia and Montenegro, Department of Aeronautics and Astronautics, Kyoto University, Japan, Institut fur Kernphysik, Universitat Frankfurt, University of Missouri - Rolla, University of Maryland, Department of Physics, Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311, USA, CSIRO Molecular Science, Organic Chemistry Institute, University of Heidelberg, Centre for Molecular Simulation and School of Information Technology, Swinburne University of Technology, Department SBG, Limburgs Universitair Centrum, The Open University, Department of Mechanical Engineering, University of Minnesota, INP-Greifswald-Germany, LACE-Lyon-France, California State Polytechnic University, Pomona, Dublin City University, Ireland, OSRAM GmbH, D-81536 Munich, Germany, Institute of Low Temperature Plasma Physics, 17489 Greifswald, Institut of Physics, University of Greifswald, Germany, Instituto de Ciencias Nucleares, UNAM, UAM, Acopotzalco, Centro de Ciencias F\'{i}sicas, UNAM, Eindhoven University of Technology, Sandia National Lab, Air Force Research Laboratory WPAFB, School of Electrical Engineering, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia and Montenegro, Advanced Energy Incorporated, Applied Materials Incorporated, National Centre for Plasma Science and Technology, Dublin City University, Ireland, Institute for Plasma and Atomic Physics, Ruhr-University Bochum, Germany, Institute for Plasma and Atomic Physics, Ruhr University Bochum, Germany, OSRAM Sylvania, HanYang University, Ruhr-University of Bochum, Nagoya University, Stanford University, Department of Physical Electronics -- Masryk University, Brno, Czech Republic, Hypertherm Inc., University of Minnesota, Los Alamos National Laboratory, LPTP Ecole Polytechnique 91120 Palaiseau, LACE UCB-Lyon1 UMR CNRS 5634 blvd 11Nov.1918 69100 Villeurbanne France, Lawrence Berkeley National Laboratory, University of California, Davis, Multicharged Ions Spectra Data Center of VNIIFTRI, Advanced Photon Research Center, Japan Energy Research Institute, Applied Physics Division, Los Alamos National Laboratory, Theoretical Division Los Alamos National Laboratory, Gaseous Electronics Inst., Nagoya Institute of Technology, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, Science Institute, University of Iceland, Reykjavik, Iceland, Australian National University, Flinders University, KAIST, Plasmart Co., Samsung Electronics, St Petersburgh State University-Russia, Trinity College Dublin, Ireland, School of Physics, The University of Sydney, Australia, INP Greifswald, F.-L.-Jahn-Str. 19, 17489 Greifswald, Germany, Sungkyunkwan University, Korea, National University of Ireland, Maynooth, Ireland, Applied Materials, Tokyo Institute of Technology, LPTP, Ecole Polytechnique, LPTP, Ecole Polytechnique, 91128 Palaiseau, France, School of Physics, University of Sydney, Physics Dept, Macquarie University, Australia, Department of Applied Science, University of California at Davis, Stevens Institute of Technology, Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, Shibaura Mechatronics Corp.

  • Shunji Kuroiwa

    PSAC/NIE/NTU, Singapore, School of Physics, The University of Sydney, Sydney NSW 2006, Australia, Nantes University, France, Varian Semiconductor Equipment Associates, Gloucester, MA01930, USA, Institute of Physics, POB 68, 11080 Zemun, Belgrade, Serbia and Montenegro, Department of Aeronautics and Astronautics, Kyoto University, Japan, Institut fur Kernphysik, Universitat Frankfurt, University of Missouri - Rolla, University of Maryland, Department of Physics, Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311, USA, CSIRO Molecular Science, Organic Chemistry Institute, University of Heidelberg, Centre for Molecular Simulation and School of Information Technology, Swinburne University of Technology, Department SBG, Limburgs Universitair Centrum, The Open University, Department of Mechanical Engineering, University of Minnesota, INP-Greifswald-Germany, LACE-Lyon-France, California State Polytechnic University, Pomona, Dublin City University, Ireland, OSRAM GmbH, D-81536 Munich, Germany, Institute of Low Temperature Plasma Physics, 17489 Greifswald, Institut of Physics, University of Greifswald, Germany, Instituto de Ciencias Nucleares, UNAM, UAM, Acopotzalco, Centro de Ciencias F\'{i}sicas, UNAM, Eindhoven University of Technology, Sandia National Lab, Air Force Research Laboratory WPAFB, School of Electrical Engineering, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia and Montenegro, Advanced Energy Incorporated, Applied Materials Incorporated, National Centre for Plasma Science and Technology, Dublin City University, Ireland, Institute for Plasma and Atomic Physics, Ruhr-University Bochum, Germany, Institute for Plasma and Atomic Physics, Ruhr University Bochum, Germany, OSRAM Sylvania, HanYang University, Ruhr-University of Bochum, Nagoya University, Stanford University, Department of Physical Electronics -- Masryk University, Brno, Czech Republic, Hypertherm Inc., University of Minnesota, Los Alamos National Laboratory, LPTP Ecole Polytechnique 91120 Palaiseau, LACE UCB-Lyon1 UMR CNRS 5634 blvd 11Nov.1918 69100 Villeurbanne France, Lawrence Berkeley National Laboratory, University of California, Davis, Multicharged Ions Spectra Data Center of VNIIFTRI, Advanced Photon Research Center, Japan Energy Research Institute, Applied Physics Division, Los Alamos National Laboratory, Theoretical Division Los Alamos National Laboratory, Gaseous Electronics Inst., Nagoya Institute of Technology, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, Science Institute, University of Iceland, Reykjavik, Iceland, Australian National University, Flinders University, KAIST, Plasmart Co., Samsung Electronics, St Petersburgh State University-Russia, Trinity College Dublin, Ireland, School of Physics, The University of Sydney, Australia, INP Greifswald, F.-L.-Jahn-Str. 19, 17489 Greifswald, Germany, Sungkyunkwan University, Korea, National University of Ireland, Maynooth, Ireland, Applied Materials, Tokyo Institute of Technology, LPTP, Ecole Polytechnique, LPTP, Ecole Polytechnique, 91128 Palaiseau, France, School of Physics, University of Sydney, Physics Dept, Macquarie University, Australia, Department of Applied Science, University of California at Davis, Stevens Institute of Technology, Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, Shibaura Mechatronics Corp.