Measurements of the Sheath Capacitance using a Tunnel Diode Oscillator in Inductively Coupled Plasmas

ORAL

Abstract

A tunnel diode oscillation method is one of techniques to measure the sheath capacitance in plasmas. [ B .M Oliver et. al., J . Physics. E. 5, 718 ] Using this method, we investigated the sheath capacitance of a ring probe in an Inductively Coupled Plasmas (ICPs). The effects of the RF fluctuation and the noise on the sheath capacitance were considered. We measured the change in the tunnel diode oscillation frequency to acquire the sheath capacitance of the probe. The probe was biased with probe potentials ranging from 0V to -45V. The result agreed well with that calculated from a Child- Langmuir theory when the probe was highly negative biased with respect to the probe floating potential. However, it was found that the measured sheath capacitance increases rapidly than that from the Child-Langmuir theory as the bias potential increases. This is understood by the Bohm sheath theory.

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Authors

  • SeJin Oh

  • Minhyong Lee

  • Shunji Kuroiwa

    PSAC/NIE/NTU, Singapore, School of Physics, The University of Sydney, Sydney NSW 2006, Australia, Nantes University, France, Varian Semiconductor Equipment Associates, Gloucester, MA01930, USA, Institute of Physics, POB 68, 11080 Zemun, Belgrade, Serbia and Montenegro, Department of Aeronautics and Astronautics, Kyoto University, Japan, Institut fur Kernphysik, Universitat Frankfurt, University of Missouri - Rolla, University of Maryland, Department of Physics, Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311, USA, CSIRO Molecular Science, Organic Chemistry Institute, University of Heidelberg, Centre for Molecular Simulation and School of Information Technology, Swinburne University of Technology, Department SBG, Limburgs Universitair Centrum, The Open University, Department of Mechanical Engineering, University of Minnesota, INP-Greifswald-Germany, LACE-Lyon-France, California State Polytechnic University, Pomona, Dublin City University, Ireland, OSRAM GmbH, D-81536 Munich, Germany, Institute of Low Temperature Plasma Physics, 17489 Greifswald, Institut of Physics, University of Greifswald, Germany, Instituto de Ciencias Nucleares, UNAM, UAM, Acopotzalco, Centro de Ciencias F\'{i}sicas, UNAM, Eindhoven University of Technology, Sandia National Lab, Air Force Research Laboratory WPAFB, School of Electrical Engineering, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia and Montenegro, Advanced Energy Incorporated, Applied Materials Incorporated, National Centre for Plasma Science and Technology, Dublin City University, Ireland, Institute for Plasma and Atomic Physics, Ruhr-University Bochum, Germany, Institute for Plasma and Atomic Physics, Ruhr University Bochum, Germany, OSRAM Sylvania, HanYang University, Ruhr-University of Bochum, Nagoya University, Stanford University, Department of Physical Electronics -- Masryk University, Brno, Czech Republic, Hypertherm Inc., University of Minnesota, Los Alamos National Laboratory, LPTP Ecole Polytechnique 91120 Palaiseau, LACE UCB-Lyon1 UMR CNRS 5634 blvd 11Nov.1918 69100 Villeurbanne France, Lawrence Berkeley National Laboratory, University of California, Davis, Multicharged Ions Spectra Data Center of VNIIFTRI, Advanced Photon Research Center, Japan Energy Research Institute, Applied Physics Division, Los Alamos National Laboratory, Theoretical Division Los Alamos National Laboratory, Gaseous Electronics Inst., Nagoya Institute of Technology, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, Science Institute, University of Iceland, Reykjavik, Iceland, Australian National University, Flinders University, KAIST, Plasmart Co., Samsung Electronics, St Petersburgh State University-Russia, Trinity College Dublin, Ireland, School of Physics, The University of Sydney, Australia, INP Greifswald, F.-L.-Jahn-Str. 19, 17489 Greifswald, Germany, Sungkyunkwan University, Korea, National University of Ireland, Maynooth, Ireland, Applied Materials, Tokyo Institute of Technology, LPTP, Ecole Polytechnique, LPTP, Ecole Polytechnique, 91128 Palaiseau, France, School of Physics, University of Sydney, Physics Dept, Macquarie University, Australia, Department of Applied Science, University of California at Davis, Stevens Institute of Technology, Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, Shibaura Mechatronics Corp.

  • Chinwook Chung

    Division of Electrical Engineering, Hanyang University