2D Fluid Simulation of VHF{\_}ICP Source with Parallel Resonance Antenna for Next Generation Etch Processing

Inductively coupled plasma is known for high-density material processing at low pressure. In addition to high density and low pressure, a next generation of plasma sources are needed to control the ion flux and ion-bombarding energy for wafer of over 300mm diameter. However the conventional ICP source with a spiral antenna have a problem of non-uniformity due to large inductance. To overcome the non-uniformity problem, the antenna is segmented and three segments are connected in parallel. The antenna with three segments connected in parallel also causes the non-uniformity problem due to the difference of inductance for each segments. The current in outer segment is larger than that of other segments and it causes the non-uniformity of plasma in radial direction. To reduce the problem, the variable capacitor is connected in series with outer segment. After all, we can overcome the problem of non- uniformity by the proper distribution of current among three segments with variable capacitor. To investigate the discharge phenomenon in the VHF(Very High Frequency){\_}ICP source that consists of the parallel resonance antenna, we have used a two-dimensional fluid simulation and the results from our simulation are compared with experimental data. * Jusung Engineering Co, Gwangju-Gun, Gyeonggi, S.Korea