Characterization of Anode Boundary Layer of a High Intensity Arc with Cross Flow

POSTER

Abstract

Anode boundary layers of high intensity arcs are characterized by large gradients in temperature, electrical potential and velocity. They determine anode life time and processing efficiency in many industrial applications. It has been shown that when a strong cold cross flow is applied to a high intensity arc, a new anode arc attachment mode can be formed, with a larger anode boundary layer area and thus smaller thermal load to the anode. In this study, we have used Langmuir probe and laser Thomson scattering diagnostics to measure the electron temperature and electron density in the anode boundary layer for this attachment mode for an atmospheric pressure argon arc. The arc is operated with working gas flow rates from 2 slpm to 18 slpm, and with currents from 50A to 100A. Argon and nitrogen are used as cross flow gases, and they have been shown to have quite different effects on the anode attachment. Our results indicate a strong effect of the attachment mode on the electron temperature and steeper electron density gradients than predicted by models.

Authors

  • Guang Yang

  • Shunji Kuroiwa

    PSAC/NIE/NTU, Singapore, School of Physics, The University of Sydney, Sydney NSW 2006, Australia, Nantes University, France, Varian Semiconductor Equipment Associates, Gloucester, MA01930, USA, Institute of Physics, POB 68, 11080 Zemun, Belgrade, Serbia and Montenegro, Department of Aeronautics and Astronautics, Kyoto University, Japan, Institut fur Kernphysik, Universitat Frankfurt, University of Missouri - Rolla, University of Maryland, Department of Physics, Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311, USA, CSIRO Molecular Science, Organic Chemistry Institute, University of Heidelberg, Centre for Molecular Simulation and School of Information Technology, Swinburne University of Technology, Department SBG, Limburgs Universitair Centrum, The Open University, Department of Mechanical Engineering, University of Minnesota, INP-Greifswald-Germany, LACE-Lyon-France, California State Polytechnic University, Pomona, Dublin City University, Ireland, OSRAM GmbH, D-81536 Munich, Germany, Institute of Low Temperature Plasma Physics, 17489 Greifswald, Institut of Physics, University of Greifswald, Germany, Instituto de Ciencias Nucleares, UNAM, UAM, Acopotzalco, Centro de Ciencias F\'{i}sicas, UNAM, Eindhoven University of Technology, Sandia National Lab, Air Force Research Laboratory WPAFB, School of Electrical Engineering, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia and Montenegro, Advanced Energy Incorporated, Applied Materials Incorporated, National Centre for Plasma Science and Technology, Dublin City University, Ireland, Institute for Plasma and Atomic Physics, Ruhr-University Bochum, Germany, Institute for Plasma and Atomic Physics, Ruhr University Bochum, Germany, OSRAM Sylvania, HanYang University, Ruhr-University of Bochum, Nagoya University, Stanford University, Department of Physical Electronics -- Masryk University, Brno, Czech Republic, Hypertherm Inc., University of Minnesota, Los Alamos National Laboratory, LPTP Ecole Polytechnique 91120 Palaiseau, LACE UCB-Lyon1 UMR CNRS 5634 blvd 11Nov.1918 69100 Villeurbanne France, Lawrence Berkeley National Laboratory, University of California, Davis, Multicharged Ions Spectra Data Center of VNIIFTRI, Advanced Photon Research Center, Japan Energy Research Institute, Applied Physics Division, Los Alamos National Laboratory, Theoretical Division Los Alamos National Laboratory, Gaseous Electronics Inst., Nagoya Institute of Technology, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, Science Institute, University of Iceland, Reykjavik, Iceland, Australian National University, Flinders University, KAIST, Plasmart Co., Samsung Electronics, St Petersburgh State University-Russia, Trinity College Dublin, Ireland, School of Physics, The University of Sydney, Australia, INP Greifswald, F.-L.-Jahn-Str. 19, 17489 Greifswald, Germany, Sungkyunkwan University, Korea, National University of Ireland, Maynooth, Ireland, Applied Materials, Tokyo Institute of Technology, LPTP, Ecole Polytechnique, LPTP, Ecole Polytechnique, 91128 Palaiseau, France, School of Physics, University of Sydney, Physics Dept, Macquarie University, Australia, Department of Applied Science, University of California at Davis, Stevens Institute of Technology, Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, Shibaura Mechatronics Corp.

  • Shunji Kuroiwa

    PSAC/NIE/NTU, Singapore, School of Physics, The University of Sydney, Sydney NSW 2006, Australia, Nantes University, France, Varian Semiconductor Equipment Associates, Gloucester, MA01930, USA, Institute of Physics, POB 68, 11080 Zemun, Belgrade, Serbia and Montenegro, Department of Aeronautics and Astronautics, Kyoto University, Japan, Institut fur Kernphysik, Universitat Frankfurt, University of Missouri - Rolla, University of Maryland, Department of Physics, Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311, USA, CSIRO Molecular Science, Organic Chemistry Institute, University of Heidelberg, Centre for Molecular Simulation and School of Information Technology, Swinburne University of Technology, Department SBG, Limburgs Universitair Centrum, The Open University, Department of Mechanical Engineering, University of Minnesota, INP-Greifswald-Germany, LACE-Lyon-France, California State Polytechnic University, Pomona, Dublin City University, Ireland, OSRAM GmbH, D-81536 Munich, Germany, Institute of Low Temperature Plasma Physics, 17489 Greifswald, Institut of Physics, University of Greifswald, Germany, Instituto de Ciencias Nucleares, UNAM, UAM, Acopotzalco, Centro de Ciencias F\'{i}sicas, UNAM, Eindhoven University of Technology, Sandia National Lab, Air Force Research Laboratory WPAFB, School of Electrical Engineering, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia and Montenegro, Advanced Energy Incorporated, Applied Materials Incorporated, National Centre for Plasma Science and Technology, Dublin City University, Ireland, Institute for Plasma and Atomic Physics, Ruhr-University Bochum, Germany, Institute for Plasma and Atomic Physics, Ruhr University Bochum, Germany, OSRAM Sylvania, HanYang University, Ruhr-University of Bochum, Nagoya University, Stanford University, Department of Physical Electronics -- Masryk University, Brno, Czech Republic, Hypertherm Inc., University of Minnesota, Los Alamos National Laboratory, LPTP Ecole Polytechnique 91120 Palaiseau, LACE UCB-Lyon1 UMR CNRS 5634 blvd 11Nov.1918 69100 Villeurbanne France, Lawrence Berkeley National Laboratory, University of California, Davis, Multicharged Ions Spectra Data Center of VNIIFTRI, Advanced Photon Research Center, Japan Energy Research Institute, Applied Physics Division, Los Alamos National Laboratory, Theoretical Division Los Alamos National Laboratory, Gaseous Electronics Inst., Nagoya Institute of Technology, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, Science Institute, University of Iceland, Reykjavik, Iceland, Australian National University, Flinders University, KAIST, Plasmart Co., Samsung Electronics, St Petersburgh State University-Russia, Trinity College Dublin, Ireland, School of Physics, The University of Sydney, Australia, INP Greifswald, F.-L.-Jahn-Str. 19, 17489 Greifswald, Germany, Sungkyunkwan University, Korea, National University of Ireland, Maynooth, Ireland, Applied Materials, Tokyo Institute of Technology, LPTP, Ecole Polytechnique, LPTP, Ecole Polytechnique, 91128 Palaiseau, France, School of Physics, University of Sydney, Physics Dept, Macquarie University, Australia, Department of Applied Science, University of California at Davis, Stevens Institute of Technology, Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, Shibaura Mechatronics Corp.