Transport Coefficients and Cross Section Set for Electron Scattering in Mixtures $CF_4$ and $CF_2$

We present transport coefficients for electrons in mixtures of $CF_4$ with $CF_2$ for conditions such as those found in plasma assisted technologies for semiconductor production. We used a two term numerical solution of the Boltzmann equation and we tested the accuracy of the results by using a Monte Carlo simulation. Mixtures of radicals with $CF_4$ were constructed by using the cross sections of Tennyson and coworkers [1]. We selected a wide range of abundances of radicals from $0.01\%$ to $10\%$ in the mixture. For low $E/N$ large deviations from values for total electron attachment for pure $CF_4$ are obtained for mixtures of $CF_4$ and its radicals if abundances are sufficiently high. The effect of radicals on electron kinetics is relatively small for abundances below 1\%. For higher abundances all transport coefficients, mean energies and rate coefficients are affected to a degree which could affect the operating conditions in plasmas. \newline \newline [1] I. Rozum, P. Limao-Vieira, S. Eden, and J. Tennyson, N.J. Mason, J. Phys. Chem. Ref. Data, Vol. 35, No. 1, (2006) 267.