Fluid model for a Cl$_{2}$/Ar inductively coupled discharge

III-V compounds such as GaAs, InP or GaN-based materials are widely used for photonics and optoelectronic applications, especially in the telecommunications and light detection industries. Although many problems remain to be understood, inductively coupled discharges seem to be very promising to etch such materials, using Cl$_{2}$/Ar, Cl$_{2}$/N$_{2}$ and Cl$_{2}$/H$_{2}$ gas chemistries. Hsu et al. [1] developed a 2D-fluid model to calculate the plasma parameters along with the neutral radical densities and profiles for purely inductive discharges in Ar/O$_{2}$ and Ar/O$_{2}$/Cl$_{2}$ mixtures. The model couples plasma electrodynamics to neutral chemistry and transport, under the assumption of quasi-neutrality. Power deposited into electrons comes from inductive coupling from an external coil. We have used this model to investigate Cl$_{2}$/Ar chemistries and get information about the electron density and temperature, composition of the ion wall flux and radical densities. Some comparisons with experimental measurements are reported. The addition of capacitive coupling and the study, in the presence of negative ions, of the transitions from E to H modes are under investigation. [1] Hsu et al, J. Phys. D: Appl. Phys. 39 (2006) 3272-3284