Self-Regulation Plasma Doping for 2D and 3D devices

Plasma Doping has been industrialized for DRAM application. On the other hand, for 3D application, conformal and shallow doping for tri-gate and side-wall doping for fins are required to form junctions on the side-walls. This requirement is quite difficult to be realized by conventional ion implantation (\textbf{II}) or cluster \textbf{II}. Plasma doping (\textbf{PD}) has been proposed as a candidate for this requirement. Relatively better conformality was achieved such as the ratio of the top to the side resistivity of fin is 1.4 by \textbf{PD} and 1.08 by \textbf{VPD} or \textbf{ALD}. In addition, sputter erosion for fins was the most significant issue in case of \textbf{PD}. We have been proposed \textbf{SRPD} as a technique to solve the less conformality of \textbf{II} and the less controllability of conventional \textbf{PD}, \textbf{VPD} and \textbf{ALD}. We present New Self-Regulation Plasma Doping (n\textbf{SRPD}) with B$_{2}$H$_{6}$/He plasma that has been developed to provide precisely controllable ultra-shallow junctions for planar FET and conformal junctions for 3D structures. Manufacturing level of process controllability ($<$1{\%} on dose) and advantage on the devices of n\textbf{SRPD} has been achieved with FinFETs and planar pMOSFETs. This n\textbf{SRPD} has been developed on commercially available and production worthy plasma platform.