Experimental investigation of plasma parameter profiles on wafer level with discharge gap lengths in an inductively coupled plasma

POSTER

Abstract

Experimental investigation of the gap length effect on plasma parameters was performed in a planar type inductively coupled plasma (ICP) at various conditions. The spatial profile (wafer level, 260 mm) of ion flux, and electron temperature were measured from a 2-D floating probe measurement system. At low pressures, the spatial profile of the ion flux rarely changed; however, at relatively high pressures, the spatial profile of the ion flux dramatically changed with different discharge gap length.

Authors

  • Ju Ho Kim

    • Department of Electrical Engineering, Hanyang University, Seoul, 133-791, Republic of Korea
  • Young-Cheol Kim

    • Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea
  • June Young Kim

    • Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea
  • Chin-Wook Chung

    • Hanyang University
    • Department of Electrical Engineering, Hanyang University
    • Hanyang Univ.
    • Department of Electrical Engineering, Hanyang University, Seoul, 133-791, Republic of Korea
    • Department of Electrical Engineering, Hanyang University, Seoul 133-791, South Korea