Domain control of ZnO nanoparticles in a coaxial gas-flow pulse Ar/O$_{2}$ plasma

A limited area, to which ZnO nanoparticles are selectively adhered, is called a domain. Formation of the domain was controlled by using a coaxial gas-flow pulse Ar/O$_{2}$ plasma. It was found that the mechanism of domain formation was closely related to the initial surface condition of Si substrate. Especially, the cleaning process was crucial. Here, we employed a patterning of the domain by using a fine mesh as a template. The formation processes were estimated by SEM and EDX. The technique developed here will be applied to a selective nanoparticle patterning.