Development of Y2O3 Film Deposition Method using Low-temperature Microwave Excited Atmospheric Pressure Plasma Jet (MW-APPJ)

ORAL

Abstract

The Y2O3 film has great demand in various applications since it has high permittivity, thermodynamic stability, and resistance to corrosive environments. Traditional plasma spray coatings are still widely used to deposit Y2O3 film due to their simplicity and ability to coat larger and more complex shapes. While recent Y2O3 deposition techniques such as aerosol deposition and ion beam-assisted deposition require high temperatures or vacuum conditions and lead to high operational costs. Among them, plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD) offers a low-cost alternative because of the non-vacuum environment and low-temperature conditions. In addition, a microwave atmospheric pressure plasma jet (MW-APPJ) can provide high-density reactive species for deposition and low-temperature operation for cost.

In this study, we employed MW-APPJ to deposit Y2O3 films on quartz glass substrates using yttrium acetate as a precursor. The deposition was performed at a substrate temperature of 100oC. The dependence of gas flow rate has been investigated. The deposited films exhibited uniformity and adherence to substrates. Grazing incidence x-ray diffraction (GI-XRD) proved the crystalline structure of Y2O3 films, revealing a predominant single cubic (332) phase at around 40.1o. Contrary to the previous studies, the MOCVD or PE-MOCVD Y2O3 films were mostly amorphous when the deposition temperature was below 400oC. Scanning electron microscopy (SEM) images showed granular and dense film surfaces with the presence of crystallinity. XPS confirmed also the Y 3d doublets at 160.6 and 158.8 eV with a shift around 1.7 eV. Notably, the observed deviations from the typical binding energies of Y 3d5/2 and 3d3/2 in pure Y2O3 (156.7 and 158.7 eV, respectively) to higher energies in the deposited films indicate complex interactions involving yttrium.

A presence of crystallinity of Y2O3 was observed at higher carrier gas flow rates, as indicated by GI-XRD. These findings suggest that the method is effective for the quality production of Y2O3 films at relatively low costs. The MW-APPJ, in combination with a MOCVD system, suggests an overall potential to replace a conventional plasma spray technique to obtain Y2O3 film cost-effectively.

Presenters

  • Bat-Orgil Erdenezaya

    Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan

Authors

  • Bat-Orgil Erdenezaya

    Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan

  • Hirochika Uratani

    Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan

  • Ruka Yazawa

    Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan

  • Md. Shahiduzzaman

    Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan

  • Tetsuya Taima

    Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan

  • Yasunori Tanaka

    Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan, Kanazawa University

  • Tatsuo Ishijima

    Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan