Plasma Etching II

FOCUS · ER2 · ID: 2480686

Presentations

  • Unintended Gas Discharges in Plasma Sources for Semiconductor Fabrication

    ORAL

    –

    Publication: Appl. Phys. Lett. 123, 232108 (2023)

    Presenters

    • Sunghyun Son

      Princeton University

    Authors

    • Sunghyun Son

      Princeton University

    • Geunwoo Go

      Seoul National University

    • Willca Villafana

      Princeton Plasma Physics Laboratory

    • Igor D Kaganovich

      Princeton Plasma Physics Laboratory

    • Alexander V. Khrabrov

      Princeton Plasma Physics Laboratory

    • Hyo-Chang Lee

      Korea Aerospace University

    • Gwang-Seok Chae

      Korea Aerospace University

    • SeungBo Shim

      Samsung Electronics Co. Ltd

    • Donghyeon Na

      Samsung Electronics Co. Ltd

    • June Young Kim

      Korea University

    View abstract →

  • Role of secondary electrons in high power dual frequency capacitively coupled plasmas

    ORAL

    –

    Publication: [1] A V Phelps and Z Lj Petrovic 1999 Plasma Sources Sci. Technol. 8 R21

    Presenters

    • Sanjana Kerketta

      Lam Research

    Authors

    • Sanjana Kerketta

      Lam Research

    • Chenhui Qu

      Lam Research, Lam research

    • Saurav Gautam

      Lam research

    • Rohini Mishra

      Lam research

    • Anamika Chowdhury

      Lam research

    • Saravanapriyan Sriraman

      Lam Research, Lam Research Corporation

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  • Reaction mechanisms of ruthenium (Ru) etching by energetic oxygen and chlorine ions

    ORAL

    –

    Publication: [1] C. C. Hsu, J. W. Coburn, D. B. Graves, "Etching of ruthenium coating in O2- and Cl2- containing plasmas", Journal of Vacuum Science and Technology, A, Vol. 24 (2006), pp. 1-8
    [2] K. Karahashi, and S. Hamaguchi, J. Phys. D: Appl. Phys. 47, 224008(2014)

    Presenters

    • Takuma Yanagisawa

      Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

    Authors

    • Takuma Yanagisawa

      Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

    • Tomoko Ito

      Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

    • Masaya Imai

      R&D Group, Hitachi, Ltd.,

    • Katsuya Miura

      R&D Group, Hitachi, Ltd.,

    • Miyako Matsui

      R&D Group, Hitachi, Ltd.,

    • Kazuhiro Karahashi

      Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

    • Satoshi Hamaguchi

      Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka University

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  • Formation of Ammonium Fluorosilicate during CH<sub>2</sub>F<sub>2</sub> Plasma Etching of SiN<sub>x</sub>

    ORAL

    –

    Presenters

    • Xue Wang

      Colorado School of Mines

    Authors

    • Xue Wang

      Colorado School of Mines

    • Prabhat Kumar

      Lam Research Corporation

    • Thorsten Lill

      Lam Research Corporation

    • Harmeet Singh

      Lam Research, Lam Research Corporation

    • Mingmei Wang

      Lam Research Corporation

    • Taner Ozel

      Lam Research Corporation

    • Sumit Agarwal

      Colorado School of Mines

    View abstract →