Electron impact excitation of allowed and forbidden transitions between fine-structure levels in Ti III.
ORAL
Abstract
We present an elaborate and extensive theoretical investigation on electron impact excitation of doubly-ionized titanium (Ti III) to meet the needs of spectral analysis and plasma modelling. The calculation is carried out in the close-coupling approximation using the B-spline R-matrix method. The multi-configuration Hartree–Fock method in combination with B-spline configuration interaction expansions and the non-orthogonal orbitals technique is employed for accurate descriptions of the target wave functions and adequate accounts of the various interactions between the target states. Relativistic effects are treated at the level of the semirelativistic Breit-Pauli approximation. The present close-coupling expansion includes 138 fine-structure levels of Ti III belonging to the 3d2, 4s2, 4s4p, 3d4l (l = 0 − 3), 3d5l (l = 0 − 3), 3d6s, and 3d6p configurations. Comprehensive sets of radiative and electron collisional data are reported for all possible transitions between the individual levels. Thermally averaged collision strengths are determined using a Maxwellian distribution for a wide range of temperatures from 102 K to 105 K. The accuracy of the calculated radiative parameters is validated by comparing with available values from the NIST database and previous literature. Given the lack of sufficient currently available experimental and theoretical data, the electron impact excitation cross sections of the Ti III fine-structure levels presented here are systematic, extensive, and internally consistent, thus making them suitable for many modelling applications.
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Publication: Yang Wang, Qiu-Yao Cao, Xi-Ming Zhu, Chun-Meng Du, and Klaus Bartschat (2024), to be submitted to Plasma Sources Science and Technology
Presenters
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Klaus R Bartschat
Drake University
Authors
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Yang Wang
Harbin Institute of Technology
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Qiu-Yao Cao
Harbin Institute of Technology
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Xi-Ming Zhu
Harbin Institute of Technology
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Chun-Meng Du
Harbin Institute of Technology
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Klaus R Bartschat
Drake University