Oxidation of the metal film prepared with magnetron sputtering by using the ICP source

In optical coating and semiconductor fabrication, it is necessary to control the thickness and quality of oxide and nitride films with high deposition rate. There are many ways to be developed for many years in order to make the oxide and nitride films, for example meta-mode sputter deposition. In this work, to investigate the fundamental process, the post oxidation after sputtering metal depositions have been studied by using unique inductively coupled plasma source. X-ray photoelectron spectron spectroscopy (XPS) has been employed to characterize the effect of the plasma parameters (plasma power, gas pressure and gas mixture, and process time) on the stoichiometry and modification depth of the films.

Additionally, I also include gas flow simulation using DSMC and plasma simulation using COMSOL Multiphysics software to clarify how plasma parameters (potential, electron density and temperature and radical densities, etc.) affect on the film qualities.