Photoemission-assisted Discharge Plasma and Its Application for Carbon Electronics
ORAL
Abstract
Artificial plasma is easily created in some controlled atmosphere by electric discharge with a high-power source. It is called discharge plasma. The plasma that is generated in dry process methods such as plasma-enhanced chemical vapor deposition (PECVD) and sputtering is essential to the synthesis and processing of materials suitable to electronics or semiconductor engineering. As we can see in a plasma ball, however, the plasma is wandering, and its contour is vague. It is generally difficult to create plasma only at a desired site in the chamber with a couple of reproducible voltage and certain current density.Our group has been developing the photoemission-assisted plasma that can be created only in a designated area where vacuum ultraviolet (VUV) light is irradiated. In this system, plentiful photoelectrons are generated in the VUV-irradiated area by the photo-electric effect and work as initial electrons. Due to this far different number of electrons in between the VUV-irradiated area and the other, discharge is preferred in the former area, and the plasma is created there only as a result.
In this talk, works in our group with the photoemission-assisted plasma are presened: nano-scale tailor-made synthesis of diaomond-like carbon (DLC) films for application to carbon electronics; atomic-scale control of graphene, and plasma confinement to explore a new gas-phase reaction field.
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Publication: R. Tsukazaki, H. Naito, H. Koga, A. Fukuda, N. Kato, T. Watanabe, and S. Takabayashi, J. Vac. Sci. Technol. B 42, 034201 (2024).
S. Takabayashi, H. Hayashi, M. Yang, R. Sugimoto, S. Ogawa, and Y. Takakuwa, Diam. Relat. Mater. 81, 16 (2018).
S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, T. Otsuji, and Y. Takakuwa, Diam. Relat. Mater. 53, 11 (2015).
S. Takabayashi, S. Ogawa, Y. Takakuwa, H.-C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, and T. Otsuji, Diam. Relat. Mater. 22, 118 (2012).
Presenters
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Susumu Takabayashi
National Institute of Technology, Ariake College
Authors
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Susumu Takabayashi
National Institute of Technology, Ariake College