Uncertainties of CF4/Ar mechanisms for semiconductor plasma etching

In this work, we discuss the plasma kinetics of CF₄/Ar mixture, one of the most important gases in plasma etching applications. We use both the global and two-dimensional plasma models coupled with a comprehensive finite-rate chemical reaction mechanism to understand uncertainties of existing mechanism. We discuss the deficiencies of these mechanisms found in the literature and the approach to improve these mechanisms. We also compare the results of our simulations with the experimental results obtained using the Gas Electronics Conference reference cell plasma reactor. We analyze the influence of various model parameters such as the surface reactions mechanism, gas pressure and discharge power on the plasma parameters. We discuss how these parameters influence the kinetics of the dominant plasma species.