Isostructural phase transitions in GaN/ScN and InN/ScN superlattices
ORAL
Abstract
We predict the existence of pressure-induced isostructural phase transitions (IPTs) in GaN/ScN and InN/ScN superlattices from first principles. The IPTs in these superlattices are anomalous in the sense that they are associated with trivial order parameters and generate a dramatic change in many physical quantities. Furthermore, the {\it order} of the phase transition is found to be dependent on the superlattice period and on the non-transition-metal cation. We also reveal the reason behind, and consequences of, these unusual dependencies and IPTs.
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Authors
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V. Ranjan
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S. Bin-Omran
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Laurent Bellaiche
University of Arkansas, Physics Department, University of Arkansas, Fayetteville, AR - 72701., Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
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Ahmad Alsaad
Department of Physical Sciences, P.O. Box 3030, Irbid, Jordan