Monte Carlo Simulations of Amorphous Silicon

POSTER

Abstract

A computational algorithm has been developed for simulating amorphous silicon. The algorithm employs a Monte Carlo bond switching scheme to anneal and cool the system without creating dangling bonds. A variety of topological parameters are examined as a function of simulation cell size.

Authors

  • Dave Gilson

    Penn State Erie

  • Blair Tuttle

    Penn State University Erie, Penn State Erie