Measurement of Gate-Modulated Thermoelectric Power in Si Nanowires

We have measured the thermoelectric power (TEP) of individual Boron-doped p-type Si nanowires (SiNW). The measured TEP shows strong gate modulation as a function of gate voltage. The p-type SiNW shows positive TEP values at the turn-on regime gate voltage and a peak at the gate voltage in the subthreshold regime. We compare the electric and thermoelectric transport properties of SiNW's to CNT's and discuss their viability as good thermoelectric materials.