Growth of Ultra-long Horizontally Grown Zno NWs, their Photoluminescence and Electrical Properties

In this presentation a technique for growth of very long horizontal ZnO NWs on $(11\overline 2 0)$ sapphire surface is discussed, which is a modification to our previously published work (\textbf{\textit{Appl. Phys. Lett.}}\textbf{ 2004, 85(15), 3244)}. This technique provides the in situ alignment, predictable positioning, large scale assembly, diameter control, and production of quantum wires. A crystallographic model explaining the unique growth direction of [1$\mathop 1\limits^-00]$ is proposed, which is supported by electron-back scattering diffraction results. Two photon photoluminescence microscopy of oriented NWs with diameter about 5 nm as well as electrical characterization of individual NWs are discussed.