Infrared Hall effect in SrRuO$_3$ and CaRuO$_3$

ORAL

Abstract

The mid-infrared (MIR: 115-366 meV) Hall effect is studied in SrRuO$_3$ and CaRuO$_3$ films. In SrRuO$_3$, below 200 meV the MIR Hall response changes sign as a function of temperature near 120 K, similar to the dc Hall effect. Above 200 meV, no sign change occurs and the temperature dependence of the MIR Hall response is similar to the dc magnetization. On the other hand, in CaRuO$_3$, the MIR Hall effect is nearly independent of frequency above 100 meV, has a similar temperature dependence as the dc magnetic susceptibility, and does not change sign, unlike the dc Hall effect. In SrRuO$_3$, the complex Faraday and Kerr angles measured in the MIR at 10 K are in good qualitative and quantitative agreement with first-principles band calculations [Z. Fang et al., Science 2003].

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Authors

  • M.-H. Yang

  • G. Acbas

  • A. Markelz

    Physics, University at Buffalo, SUNY, Physics Department, University at Buffalo, Buffalo, NY 14260, Physics Department, University at Buffalo, SUNY, Buffalo, NY 14260

  • J. Cerne

    Physics Dept., Univ. at Buffalo, SUNY, Buffalo, NY, Physics Dept., Univ. at Buffalo, Buffalo, NY

  • I. Ohkubo

    Dept. of Applied Chemistry, Univ. of Tokyo, Tokyo, Japan

  • P. Khalifah

    Oak Ridge National Laboratory and University of Massachusetts, University of Massachusetts - Amherst, Chemistry Dept., Univ. of Massachusetts, Amherst, MA

  • Hans M. Christen

  • David Mandrus

    Oak Ridge National Laboratory, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, Department of Physics and Astronomy, The University of Tennessee, Knoxville and Solid State Division, Oak Ridge National Laboratory, Condensed Matter Sciences Div., Oak Ridge National Lab., Oak Ridge, TN

  • Z. Fang

    Inst. of Physics, Chinese Academy of Science, Beijing, China