Charge sensing in Si/SiGe quantum dots using single electron transistors

Qubit schemes based on silicon technology have obvious economic appeal as well as compelling physical motivations, such as a long spin-spin dephasing time. Proposed silicon solid-state qubit schemes include quantum dots coupled to fast readout devices, such as a quantum point contact or single electron transistor (SET). Recently, Si/SiGe quantum dots defined by Schottky gates deposited on a Si/SiGe heterostructure containing a high mobility two-dimensional electron gas have been fabricated.[1] Here we report the integration of a SET with such a Si/SiGe quantum dot. Several such devices have been produced, and recent measurements, including transport and sensing of the dot charge with the SET, will be discussed. [1] K A Slinker et al 2005 New J. Phys. {\bf 7} 246