Scanning tunneling spectroscopy studies of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ from the strongly underdoped to strongly overdoped regime

Using atomically resolved scanning tunneling microscopy (STS), we investigate the electronic structure Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ across a range of doping levels from x $\sim $ 0.1 up to as high as $\sim $0.23, with significant changes in electronic structure observed above p$\sim $0.21. New sample preparation processes [1] were used to produce heavily overdoped crystals suitable for the imaging of various forms of electronic heterogeneity. The evolution of the gap map $\Delta $(r), coherence peak height map A(r), the inelastic tunneling signatures $\omega $(r), and the quasiparticle interference LDOS modulations, as well as their interrelations across this range of doping levels, will be presented. \newline \newline Additional authors: J. Lee, M. Wang, Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, U.S.A; K. Fujita, Department of Advanced Materials Science, University of Tokyo, Tokyo 113-0033, Japan; H. Eisaki, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Central 2, Umezono, Tsukuba, Ibaraki 305-8568; S. Uchida, Department of Physics, University of Tokyo, Tokyo 113-0033; and J. C. Davis, Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University. \newline \newline [1] J. Slezak, K. Fujita, J. C. Davis, in preparation (2005)