All-Epitaxial Microcavity for Cavity-QED with Quantum Dots

ORAL

Abstract

We report on the optical characterization of a novel type of optical microcavity that forms a fully-buried semiconductor heterostructure and offers numerous technological advantages such as chemical/mechanical stability, good thermal heat-sinking, and compatibility with electrical injection. Based on epitaxial re-growth over a lithographically-defined, quantum dot-containing mesa, this approach leads to self-alignment of single dots with the field anti-node while simultaneously providing quality factors exceeding 10,000 that support lasing with only a single quantum dot layer. Time-resolved measurements reveal the most basic cavity-QED effect in this structure, namely the Purcell spontaneous emission enhancement. A strong spectral and spatial dependence of this effect is observed using photoluminescence imaging, highlighting in particular the importance of the spatial overlap.

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Authors

  • A. Muller

    University of Texas at Austin, Dept. of Physics, University of Texas at Austin

  • Dingyuan Lu

  • Jaemin Ahn

  • Deepa Gazula

  • Sonia Quadery

  • Sabine Freisem

  • Dennis Deppe

    University of Texas at Austin, Dept. of Electrical and Computer Engineering

  • Chih-Kang Shih

    University of Texas at Austin, Dept. of Physics, Department of Physics, the University of Texas at Austin, UT at Austin Dept. of Physics, The University of Texas at Austin, Department of Physics, the University of Texas at Austin, Austin TX 78712, Physics Department, University of Texas, The Univ. of Texas at Austin, Dept. of Physics