Tunneling evidence for weak localization in layered manganites
ORAL
Abstract
Our point contact tunneling experiments on La$_{1.28}$Sr$_{1.72}$Mn$_{2}$O$_{7}$ (bi-layered LSMO x=0.36) at low temperatures reveals a $\surd $V low bias anomaly in the tunneling conductance. This anomally qualitatively matches the $\surd $E predictions of the weak localization effect on the electronic DOS. The data could provide an important corroboration of the weak localization hypothesis, which was concluded previously from low-temperature conductivity and magnetoresistance data.
–
Authors
-
Daniel Mazur
Illinois Institute of Technology
-
K. Gray
Argonne National Laboratory
-
John F. Zasadzinski
Illinois Institute of Technology
-
Hong Zheng
Materials Science Division, Argonne National Laboratory
-
John Mitchell
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, Argonne National Laboratory, Material Science Division, Argonne National Laboratory, Materials Science Division, Argonne National LAboratory, USA, Materials Science Division, Argonne National Laboratory