Tunneling evidence for weak localization in layered manganites

ORAL

Abstract

Our point contact tunneling experiments on La$_{1.28}$Sr$_{1.72}$Mn$_{2}$O$_{7}$ (bi-layered LSMO x=0.36) at low temperatures reveals a $\surd $V low bias anomaly in the tunneling conductance. This anomally qualitatively matches the $\surd $E predictions of the weak localization effect on the electronic DOS. The data could provide an important corroboration of the weak localization hypothesis, which was concluded previously from low-temperature conductivity and magnetoresistance data.

Authors

  • Daniel Mazur

    Illinois Institute of Technology

  • K. Gray

    Argonne National Laboratory

  • John F. Zasadzinski

    Illinois Institute of Technology

  • Hong Zheng

    Materials Science Division, Argonne National Laboratory

  • John Mitchell

    Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, Argonne National Laboratory, Material Science Division, Argonne National Laboratory, Materials Science Division, Argonne National LAboratory, USA, Materials Science Division, Argonne National Laboratory