2d electronic gas properties of epitaxial graphene

ORAL

Abstract

We present transport measurement on multi-layered epitaxial graphene grown on SiC. The films, a few to a few dozen layers thick, can be lithographically patterned and show remarkable 2d electron gas properties. In high mobility samples (up to 10$^{4}$ cm$^{2}$/Vs) perpendicular magnetoresistance measurements indicate micrometer long electronic phase coherence lengths at 4K, comparable to the sample size. Pronounced Shubnikov --de Haas oscillations are consistent with graphene-like electronic dispersion relation. A novel low temperature electronic phase transition was also observed. Most recent development of his ongoing research will be presented.

Authors

  • Claire Berger

    GATECH / CNRS

  • Cecile Naud

    CNRS

  • Zhimin Song

    GATECH

  • Xuebin Li

    GATECH

  • Walt De Heer

    GATECH, Georgia Institute of Technology