2d electronic gas properties of epitaxial graphene
ORAL
Abstract
We present transport measurement on multi-layered epitaxial graphene grown on SiC. The films, a few to a few dozen layers thick, can be lithographically patterned and show remarkable 2d electron gas properties. In high mobility samples (up to 10$^{4}$ cm$^{2}$/Vs) perpendicular magnetoresistance measurements indicate micrometer long electronic phase coherence lengths at 4K, comparable to the sample size. Pronounced Shubnikov --de Haas oscillations are consistent with graphene-like electronic dispersion relation. A novel low temperature electronic phase transition was also observed. Most recent development of his ongoing research will be presented.
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Authors
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Claire Berger
GATECH / CNRS
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Cecile Naud
CNRS
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Zhimin Song
GATECH
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Xuebin Li
GATECH
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Walt De Heer
GATECH, Georgia Institute of Technology