Calculations of Land\'e g-factors in III-V nanowhisker quantum dots

We present detailed numerical calculations of Land\'e g-factors in semiconductor nanowire based quantum dots. We consider 111 oriented InAs nanowires with InP double barriers forming the dot, for which transport properties have recently been investigated[1]. We find that compared to recent calculations of self-assembled InAs/GaAs quantum dots[2], typical nanowire dots have larger, and negative, g-factors. We attribute this to the nanowire dots being larger than self-assembled dots, resulting in less angular momentum quenching. For nanowire sizes typical of those that have been fabricated to date, we find $g \approx -3$.\\ 1. M. T. Bj{\"o}rk et~al., Nano Letters, {\bf 4}, 1621 (2004).\\ 2. C. E. Pryor, M. E. Flatte, Phys. Rev. Lett., in press, www.arxiv.org/abs/cond-mat/0410678