Epitaxial Ferromagnet on Ge(111) : Mn$_{5}$\textbf{Ge}$_{3}$

Magnetic materials used for recording and reading information involve the use of the electron spin, while semiconducting devices normally take advantage of the electron charge. Recently, a big effort has been made in adding the spin degree of freedom to conventional semiconductors. A good potential candidate for spin injection in a silicon- compatible semiconductor are Mn$_{5}$Ge$_{3}$ thin films on Ge(111) [1]. To further gain information on the usefulness of possible spintronics applications of Mn$_{5}$Ge$_{3}$/Ge(111) multilayers angle resolved photoemission spectroscopy (ARPES) was employed to map the band dispersion of Mn$_{5}$Ge$_{3}$ films on Ge(111) above and below the Curie temperature. Furthermore, we performed temperature dependent x-ray magnetic dichroism measurements of Mn$_{5}$Ge$_{3}$ films on Ge(111) to probe the magnetic properties of Mn$_{5}$Ge$_{3}$. [1] C. Zeng \textit{et al}., \textit{Appl. Phys. Lett}. \textbf {83}, 5002 (2003).